| PART |
Description |
Maker |
| SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET (SD217 / SD219) N CHANNEL ENHANCEMENT MODE D MOS POWER FET
|
List of Unclassifed Man... Topaz Semiconductor ETC[ETC]
|
| SSG4501 |
Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SSG4503A |
Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
| SID01N60 |
N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SMG3407 |
P-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SSM9971 |
N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SSE9973 |
N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SMG3401 |
P-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SID3310 |
P-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SGM2306A |
N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|