| PART |
Description |
Maker |
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| 2SD1328 |
Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., L...
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| CM35MXA-24S13 |
Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
|
Powerex Power Semiconductors
|
| H11D3M |
IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV)
|
Fairchild Semiconductor Corporation
|
| 2SC5585TL |
NPN Low VCE(sat) Transistor
|
ROHM
|
| NSV60601MZ4T1G NSV60601MZ4T3G |
60 V, 6.0 A, Low VCE(sat) NPN Transistor
|
ON Semiconductor
|
| TSD882SCY TSD882S TSD882SCT |
Low Vce(sat) NPN Transistor
|
TSC[Taiwan Semiconductor Company, Ltd]
|
