| PART |
Description |
Maker |
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBSS303NZ |
30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏,5.5安NPN型低饱和压降(BISS)晶体管
|
NXP Semiconductors N.V.
|
| PBSS4580PA PBSS4580PA-15 |
80 V, 5.6 A NPN low V_CEsat (BISS) transistor 5600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 80 V, 5.6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| PBSS4160DS |
60 V 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors Philips Semiconductors
|
| PBSS4032SN |
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4160DS-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4041NX |
6.2 A NPN low VCEsat (BISS) transistor
|
Philips Semiconductors
|
| PBSS4120T-15 |
NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
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