| PART |
Description |
Maker |
| HY27UG088G5M HY27UG088GDM HY27UG088GDM-UPEB HY27UG |
8Gbit (1Gx8bit) NAND Flash
1G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| TC58DVG02A1FTI |
Flash - NAND
|
TOSHIBA
|
| TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MT29F4G08ABBEAH4 MT29F4G16ABBEAH4 MT29F4G08ABAEAH4 |
NAND Flash Memory
|
Micron
|
| MT29F128G08CECAB MT29F128G08CFAAA MT29F256G08CMCAB |
NAND Flash Memory
|
Micron
|
