| PART |
Description |
Maker |
| EPC-525-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-1 EPC-1.00-1.0-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.5-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-525-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-660-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG Siemens Semiconductor Group
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
| S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Corporation
|
| S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Photonics
|