| PART |
Description |
Maker |
| M52D32321A-10BG |
512K x 32Bit x 2Banks Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb
4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S643233E-SEN |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
| KM432D2131 |
512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM
|
Samsung Semiconductor
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
