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M12L32321A-7BG - 512K x 32Bit x 2Banks Synchronous DRAM

M12L32321A-7BG_4566562.PDF Datasheet


 Full text search : 512K x 32Bit x 2Banks Synchronous DRAM
 Product Description search : 512K x 32Bit x 2Banks Synchronous DRAM


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K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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Elite Semiconductor Memory Technology Inc.
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Elite Semiconductor Memory Technology Inc.
T431616B-20S T431616B T431616B-10C T431616B-10S T4 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT[Taiwan Memory Technology]
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
Taiwan Memory Technology
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T436432B-5S T436432B-55S 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
Taiwan Memory Technology
HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW
Samsung Semiconductor Co., Ltd.
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
 
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