PART |
Description |
Maker |
FAR-F5KA-836M50-D4CM |
Cell Band-Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
FAR-F5KA-836M50-D4DF |
CDMA / GSM850 Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
TMXAT12 |
SAW Bandpass Filter - eGSM Rx - RF
|
TEMEX
|
IRFD9014 |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 1.1A的) -60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
|
TA0152A |
SAW Filter 942.5MHz For EGSM SMD 3.0×3.0
|
TAI-SAW TECHNOLOGY CO., LTD.
|
AWT6102M2 |
EGSM/DCS/PCS Triple Band Power Amplifier Module
|
Anadigics Inc
|
IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D-Pak package -60V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A) Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 5.1A
|
IRF[International Rectifier] Samsung semiconductor International Rectifier, Corp.
|
IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
RFP-250375-4X50-2 |
Chip Terminations 150 Watts, 50ohm
|
Anaren Microwave
|
RFP-100200A25Z50 |
Surface Mount Termination 10 Watts, 50ohm
|
Anaren Microwave
|
RFP-250250N6X50-2 |
Aluminum Nitride Terminations 40 Watts, 50ohm
|
Anaren Microwave
|