| PART |
Description |
Maker |
| FAR-F5KA-881M50-D4DB |
GSM850/WCDMA Rx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| AWT6275 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 帮助膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| FAR-F5KB-881M50-B4EJ |
GSM850-Rx (50/200ohm)
|
Fujitsu Component Limited.
|
| SKY77517 |
Low transmit supply current - GSM850 1.3 A
|
Skyworks Solutions Inc.
|
| RF3166 RF3166ASMPCBA-410 RF3166PCBA-410 RF3166SB |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
http://
RF Micro Devices
|
| TQM7M5012 |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
|
TriQuint Semiconductor
|
| RF3140 RF3140PCBA-41X RF31401 |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
| RF3146PCBA-41X RF31461 |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
| RF3145PCBA-41X RF3145 |
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
|
RFMD[RF Micro Devices]
|
| AWT6201 |
GSM850/GSM900/DCS/PCS Quad Band PowerPlexer with Integrated Power Control
|
ANADIGICS[ANADIGICS, Inc]
|
| IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
| TQM7M5013 |
Quad-Band GSM850/GSM900/DCS/PCS Advanced Input Power Controlled EDGE PAM
|
TriQuint Semiconductor
|
