| PART |
Description |
Maker |
| FAR-F5KA-836M50-D4DF |
CDMA / GSM850 Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| AWT6301M9P8 AWT6301 |
CELLULAR DUAL MODE AMPLS/CDMA 3.4V/28 dBm LINEAR POWER AMPLIFIER MODULE 胞双模AMPLS / CDMA.4V/28 dBm线性功率放大器模块
The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| CX77304-15 |
PA Module for Dual Band GSM850 PCSI900 / GPRS Applications
PA Module for Dual-band GSM850 PCS1900 / GPRS Applications
PAM for Dual-band GSM850 PCS1900 / GPRS
|
Skyworks Solutions Inc.
|
| RF2381_06 RF2381 RF2381PCBA-41X RF238106 |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER
|
RFMD[RF Micro Devices]
|
| AWT6133 AWT6133M7P8 |
PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module CDMA.5V/29dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| RF2638 |
W-CDMA AND CDMA UPCONVERTER/ BPSK MODULATOR
|
RF MICRO DEVICES INC
RFMD[RF Micro Devices]
|
| MAX2310 MAX2316EEI MAX2310EEI MAX2310-MAX2316 MAX2 |
Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70
CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer CDMA IF VGA及I/Q解调器，带有VCO及合成器
|
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| FAR-F5KB-881M50-B4EJ |
GSM850-Rx (50/200ohm)
|
Fujitsu Component Limited.
|
| B39881B9456P810 |
SAW RX filter GSM850 / WCDMA band V / Cellular
|
EPCOS
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
