PART |
Description |
Maker |
CY62157DV30 CY62157DV30LL-70ZXI CY62157DV30L CY621 |
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48 8-Mbit (512K x 16) MoBL Static RAM 8兆位(为512k × 16)的MoBL静态RAM 8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48 8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-39 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-39 Bundled Coaxial Cable; Impedance:75ohm; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Matte Black RoHS Compliant: Yes Coaxial Cable; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes Quadruple 2-Input Positive-OR Gate 14-TSSOP -40 to 85 8-Mbit (512K x 16) MoBL(R) Static RAM
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
Y30-48S5-12-JI Y30-24S5-12-JI Y30-24S5-15 Y30-48S5 |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM 5V, 3.3V, ISR High-Performance CPLDs 5V, 3.3V, ISR™ High-Performance CPLDs 模拟IC MoBL® 8-Mbit (512K x 16) Static RAM 模拟IC MoBL® 2-Mbit (128K x 16) Static RAM 模拟IC
|
SIEMENS AG ITT, Corp. Aimtec
|
ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
|
CY62138EV30 CY62138EV30LL |
2 Mbit (256K x 8) MoBL Static RAM
|
Cypress Semiconductor
|
CY62158DV30L CY62158DV30L-45BVI CY62158DV30L-45ZSX |
8-Mbit (1024K x 8) MoBL Static RAM
|
Cypress Semiconductor
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36/1M × 18)流水线双氰胺同步静态存储器 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16)低压快闪记忆体
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位(为512k × 36/1M × 18)流水线的SRAM18 - MB的(12k × 36/1M × 18)管道式的SRAM
|
Cypress Semiconductor Corp.
|