| PART |
Description |
Maker |
| MF312 |
Passive Modulartaskopfe/ Passive Modular Probes
|
List of Unclassifed Manufac...
|
| S469-0060-02 S469-0040-02 S469-0080-02 S474-0200-0 |
10 TAP 14 PIN DIP PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, PDSO14
PASSIVE DELAY LINE, TRUE OUTPUT, PDIP14
|
Bel Fuse, Inc.
BEL FUSE INC
|
| A446-0100-50 A446-0060-02 A446-0300-50 A446-0030-0 |
10 TAP 14 PIN DIP PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, PDIP14
|
Bel Fuse, Inc.
TE Connectivity, Ltd.
|
| AMZ-2.51G AIZ-802 RHOMBUSINDUSTRIESINC-AIZ-802J AI |
PASSIVE DELAY LINE, TRUE OUTPUT, DSO8 LOW PROFILE, SMD-8
PASSIVE DELAY LINE, TRUE OUTPUT, DIP14
PASSIVE DELAY LINE, TRUE OUTPUT, DSO14
|
Rhombus Industries, Inc.
RHOMBUS INDUSTRIES INC
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| MINISMDC150 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
|
