| PART |
Description |
Maker |
| STH130N10F3-2 STFI130N10F3 STF130N10F3 |
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
N-channel 100 V, 7.8 mΩ typ., 120 A STripFET?III Power MOSFET in TO-220FP, I2PAKFP, H2PAK-2 and TO-220 packages
N-channel 100 V, 8 mOhm typ., 46 A STripFET(TM) Power MOSFET in I2PAKFP package
|
STMicroelectronics
ST Microelectronics
|
| SQM120N10-09-GE3 |
120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| RMP10GT121 RMP04GT121 RMP12GT121 RMP06GT121 |
RESISTOR, 0.25 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 0805 CHIP, LEAD FREE
RESISTOR, 0.1 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 0402 CHIP, LEAD FREE
RESISTOR, 0.5 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 1206 CHIP, LEAD FREE
RESISTOR, 0.125 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 0603 CHIP, LEAD FREE
|
TA-I Technology Co., Ltd
|
| FDMA1027PT |
Dual P-Channel PowerTrench? MOSFET -20 V, -3 A, 120 mΩ
Dual P-Channel PowerTrench㈢ MOSFET -20 V, -3 A, 120 mヘ
|
Fairchild Semiconductor
|
| PO120 |
75 / 100 and 120 Ampere Bridges
|
Electronic Devices
|
| FST12045 FST12080 FST12060 FST120100 FST12020 FST1 |
120 Amp Rectifier 20 to 100 Volts Schottky Barrier
|
MCC[Micro Commercial Components]
|
| 2N6379 ON0089 |
80, 100, 120 VOLTS 250 WATTS
From old datasheet system
|
ON Semi
|
| VAM120 |
120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz
|
GHz Technology
|
| BUK663R7-75C |
N-channel TrenchMOS FET 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BUK663R5-55C |
N-channel TrenchMOS intermediate level FET 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
|
