| PART |
Description |
Maker |
| HMT125R7BFR4C-G7 HMT125R7BFR4C-H9 HMT125R7BFR8C-G7 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
240pin DDR3 SDRAM Registered DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
256 MB 32M x 72 PC2100 Registered DIM...
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank
Registered DDR SDRAM-Modules
Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HY5DU56422BT-D4 HY5DU56422BT-D43 HY5DU56422BT-J HY |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
DDR SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
|
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| K4B1G0846G-BCMA K4B1G0846G-BCH9 K4B1G0846G-BCK0 K4 |
1Gb G-die DDR3 SDRAM
|
Samsung semiconductor
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| EBJ10RE8BAFA-8C-E EBJ10RE8BAFA-AE-E EBJ10RE8BAFA-D |
1GB Registered DDR3 SDRAM DIMM
|
Elpida Memory
|
| HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注
Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HB54R1G9F2-B75B HB54R1G9F2 HB54R1G9F2-10B HB54R1G9 |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
