PART |
Description |
Maker |
ATA5570-TAQY ATA557001-DDW |
Multifunctional 330-bit Read/Write RF Sensor Identification IC
|
ATMEL Corporation
|
RTC-63423 RTC-63421 RTC-63421M |
4-bit MULTIFUNCTIONAL REAL TIME CLOCK MODULE
|
Electronic Theatre Controls, Inc.
|
FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read RES, 0603, SMD, 0.1%, TKF 11.8K (MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read 2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM) (MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
|
EVAL-AD7783EB AD7783 AD7783BRU AD7783BRU-REEL AD77 |
Single-Channel, Read-Only, Pin-Configured, 24-bit Sigma-Delta A/D Converter with Switchable Current Sources Read-Only, Pin Configured 24-Bit ADC with Excitation Current Sources
|
AD[Analog Devices]
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪
|
Advanced Micro Devices, Inc.
|
IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极 (IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp. Intersil Corporation
|
TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory 170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
AM29PDL128G80PEI AM29PDL128G70RPEF AM29PDL128G70RP |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
|
AMD[Advanced Micro Devices]
|
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49 |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
|
Atmel
|
D640G70PI D640G12PI D640G90PI AM29DL640G90PCI AM29 |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪
|
Spansion Inc. Spansion, Inc.
|