| PART |
Description |
Maker |
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| GP10M GP10A GP10B GP10D GP10G GP10J GP10K |
1.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x9 mm; Packaging: Bulk
Glass Passivated Junction Rectifiers 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| GPP20A GPP20B GPP20D GPP20G GPP20J GPP20K GPP20M |
Glass Passivated Junction Rectifiers 玻璃钝化结整流器
Glass Passivated Junction Rectifiers, Forward Current 2.0A
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| 1N4001GP 1N4002GP 1N4003GP 1N4004GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 50V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 100V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
|
Vishay
|
| 1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics
http://
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| UGF10D UGF10K UGF10A UGF10B UGF10F UGF10G UGF10J |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFACE EFFICIENT RECTIFIER
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
ZOWIE[Zowie Technology Corporation]
|
| DG1 CG1 |
Miniature Clamper/Damper Glass Passivated Junction Rectifier(微型钳位/阻尼钝化玻璃结型整流
MINIATURE CLAMPER / DAMPER GLASS PASSIVATED JUNCTION RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| UGP10A-15 |
Glass Passivated Junction
|
Leshan Radio Company
|
| GN2A05 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| GRN305 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
