| PART |
Description |
Maker |
| SSO-AD-230NIR-TO52 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500-TO52NF |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500-TO52 |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-1100-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| C30645E C30662E |
InGaAs Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SD036-70-62-531 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| C30737P-500 C30737 C30737E-230 C30737E-500 C30737P |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| R5509-4305 |
NIR PHOTOMULTIPLIER TUBES
|
Hamamatsu Corporation
|
| R5509-72 R5509-42 |
NIR PHOTOMULTIPLIER TUBES
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
