| PART |
Description |
Maker |
| SSO-AD-230NIR-TO52 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| AD500-9 |
Avalanche Photodiode NIR
|
Silicon Sensor
|
| SSO-AD-500NIR-TO52-S1 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| ODA-5W-100K |
NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER
|
OptoDiode Corp
|
| S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
Hamamatsu Corporation
|
| SSO-AD-500-TO52 |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| APD230-LCC |
silicon avalanche photodiode
|
Roithner LaserTechnik G...
|
| C30645E C30662E |
InGaAs Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SD012-70-62-541 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| SD630-70-72-500 |
Non-Cooled Large Area Red Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| R5509-4305 |
NIR PHOTOMULTIPLIER TUBES
|
Hamamatsu Corporation
|
