| PART |
Description |
Maker |
| 2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
| PA3715 PA3711 PA3714 PA3717 PA3718 PA8105 PA8100 P |
High-grade, hardened steel frame offers superior performance and durability
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| CM501 |
The CM501 block saw is designed for durability and high performance for onsite wet and dry cutting
|
List of Unclassifed Man...
|
| UV131 |
Zinc-alloy durability
|
A-Data Technology
|
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| MIC502105 MIC5021YM MIC5021YN |
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-DIP; Mounting Type:Through Hole BUF OR INV BASED MOSFET DRIVER, PDIP8
Temperature Sensor IC; IC Function:Temperature Sensor IC; Package/Case:8-SOIC; Mounting Type:Surface Mount RoHS Compliant: Yes BUF OR INV BASED MOSFET DRIVER, PDSO8
High-Speed High-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
| SMM4FXXA-TR SMM4F28A SMM4F24A SMM4F20A SMM4F15A SM |
High junction temperature Transil?/a>
High junction temperature Transil⑩
|
STMicroelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
