| PART |
Description |
Maker |
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 |
256Mb (16Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| CYD36S18V18-167BGXC CYD36S36V18-167BGXC CYD36S36V1 |
FullFlex(TM) Synchronous SDR Dual-Port SRAM; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 2M X 18 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex(TM) Synchronous SDR Dual Port SRAM; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 1M X 36 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 1M X 36 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 256K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 4 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 3.3 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
|
Cypress Semiconductor, Corp.
|
| K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4J55323QF-GC14 K4J55323QF-GC16 K4J55323QF-GC15 K4 |
256Mbit GDDR3 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
|
Qimonda AG
|
