| PART |
Description |
Maker |
| SSG200EF60E |
200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE 600 VOLTS
|
Solid States Devices, Inc
|
| IXGX120N60B IXGK120N60B |
HiPerFAST IGBT 200 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7
600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| SPMQ461-01 |
200 AMP/600 VOLTS HALF BRIDGE IGBT POWER MODULE FOR SPACE APPLICATIONS
|
SSDI[Solid States Devices, Inc]
|
| DIM200WHS12-A000 |
200 A, 1200 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
| DIM200MKS12-A000 |
200 A, 1200 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
| CQ220-16 CQ220-16B CQ220-16D CQ220-16M CQ220-16N |
Leaded Thyristor TRIAC
16 AMP TRIAC 200 THRU 800 VOLTS 800 V, 16 A, TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 400 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 600 V, 16 A, TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 200 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 16安培可控00 7860 800伏特
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| SFF9240-28 |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF9240/3 SFF9240-3 |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
Solid States Devices, Inc.
|
