| PART |
Description |
Maker |
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HI1-0518-5 HI1-0518-8 HI3-0518-5 HI-518 FN3147 |
8-Channel/Differential 4-Channel,CMOS high speed andlog multiplexer 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP18
RESISTOR POWER 125 OHM 8W 5% 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP18
8-Channel/Differential 4-Channel/ CMOS High Speed Analog Multiplexer
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
8-Channel/Differential 4-Channel, CMOS High Speed Analog Multiplexer
8-Channel/Differential 4-Channel CMOS High Speed Analog Multiplexer
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| KS88P2416 KS88P2432 KS88C2432 KS88C2416 |
KS88 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-progr
|
SAMSUNG[Samsung semiconductor]
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10026JLL_03 APT10026JLL APT10026JLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| RJJ0315DPA RJJ0315DPA-00-J53 |
Silicon P Channel Power MOS FET High Speed Power Switching
35 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| SML80B16 SML80B12 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
|
| 2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
