| PART |
Description |
Maker |
| MA4E2502M MA4E2502 MA4E2502H MA4E2502L |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| MA4E2508M MA4E2508 MA4E2508H MA4E2508L |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
MACOM[Tyco Electronics]
|
| MA4E2501L- MA4E2501L-1290 MA4E2501L-1290T MA4E2501 |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| MA4E2544L-1282 |
SURMOUNTTM Low Barrier Silicon Schottky Cross-Over Quad Series SURMOUNTTM低门槛硅肖特基交叉四系列
|
KEMET Corporation
|
| MA4SPS302V4 |
SURMOUNTTM PIN Diode RoHS Compliant
|
M/A-COM Technology Solutions, Inc.
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 140G105XO-0000 140B105XO-0000 140-105XO-0000 140G1 |
Medium Low-Profile Junction Box
|
Glenair, Inc.
http://
|
| XL1225-X-T92-K XL1225G-X-AE3-R XL1225G-X-T92-K XL1 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
| 2SB776 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
UTC[Unisonic Technologies]
|
| UTC2SB772S 2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
