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LY62L102616 - 1024K X 16 BIT LOW POWER CMOS SRAM

LY62L102616_4532674.PDF Datasheet


 Full text search : 1024K X 16 BIT LOW POWER CMOS SRAM
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EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
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A29800UV-70 A29800TV-70 A29800TV-90 A29800UV-90 A2 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
AMIC Technology
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122 x 32 pixel format, LED or EL Backlight available
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006    Very Low Power/Voltage CMOS SRAM 512K X 8 bit
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Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
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BRILLIANCE SEMICONDUCTOR, INC.
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
EN29LV800 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory/ CMOS 3.0 Volt-only
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Cypress Semiconductor Corp.
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BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC 5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
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BRILLIANCE SEMICONDUCTOR, INC.
 
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