| PART |
Description |
Maker |
| MA4M1200 MA4M1300 MA4M3030 MA4M2020 MA4M2300 MA4M1 |
MNS Microwave Chip Capacitors 硫化锰微波贴片电
100 V, MNS microwave chip capacitor
250 V, MNS microwave chip capacitor
200 V, MNS microwave chip capacitor
|
Honeywell International, Inc.
MACOM[Tyco Electronics]
MA-Com
|
| 2FAG-M12R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
| S470-1501-09 S470-1500-02 S470-1500-03 S470-1503-3 |
HIGH-SPEED 14 PIN SMD PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, PDSO4
|
Bel Fuse, Inc.
BEL FUSE INC
|
| 0402-09.5-75 0402-09.5-82 0402-03.5-75 0402-08.5-9 |
3 PIN SIP PASSIVE DELAY MODULES PASSIVE DELAY LINE, TRUE OUTPUT, SIP3
|
Bel Fuse, Inc.
TE Connectivity, Ltd.
BEL FUSE INC
|
| MCRF200I_1M14D MCRF200I1M14D MCRF200I_SN00A MCRF20 |
The MCRF200 is a low cost one time contactlessly programmable passive Radio Frequency Indentification (RFID) IC device for low frequency applications (100 kMz - 400 kMz). The device has a total of 128 bits of memory and can be configured w
125 kHz microID⑩ Passive RFID Device
125 kHz microID Passive RFID Device
125 kHz microID?/a> Passive RFID Device
AC 4C 4#8 SKT PLUG
ER 19C 19#16 SKT PLUG
125 kHz microIDPassive RFID Device 125千赫microID⑩无RFID器件
125 kHz microIDPassive RFID Device 125千赫microID⑩无源RFID器件
125 kHz microID?Passive RFID Device
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
