| PART |
Description |
Maker |
| UMX21N |
High transition frequency (dual transistors)
|
Rohm
|
| 2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
|
TY Semiconductor Co., Ltd
|
| 2SC3547A |
Transition frequency is high and dependent on current excellently.
|
TY Semiconductor Co., Ltd
|
| 2SC3930 |
Optimum for RF amplification of FM/AM radios. High transition frequency fT.
|
TY Semiconductor Co., Ltd
|
| 2SC3707 |
Possible with the small current and low voltage High transition frequency fT
|
TY Semiconductor Co., Ltd
|
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3437 |
High transition frequency: fT = 400 MHz (typ). Low saturation voltage: VCE (sat) = 0.3 V (max).
|
TY Semiconductor Co., Ltd
|
| MAX8625A0812 |
High-Efficiency, Seamless Transition, Step-Up/Down DC-DC Converter
|
Maxim Integrated Products
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
