| PART |
Description |
Maker |
| CLE331W |
Aluminum Gallium Arsenide IRED Point Source Die
|
Clairex Technologies, Inc
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU- |
These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
|
| TLP4592G |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
Toshiba Semiconductor
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| UPW2A6R8MDD UPW1A681MPD UPW1H121MPD6 UPW1H330MED C |
ALUMINUM ELECTROLYTIC CAPACITORS
Miniature Sized, Low lmpedance, High Reliability For Switching Power Supplies
ALUMINUM ELECTROLYTIC CAPACITORS
|
Nichicon corporation
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
| MRFG35002N6T108 MRFG35002N6T1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor...
Freescale Semiconductor, Inc
|
