| PART |
Description |
Maker |
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
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NXP SEMICONDUCTORS
Philips
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches
XWAY™ ADM6993
RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm
HITFET, TEMPFET - Smart Low-Side Switches
IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B;
IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS™; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W;
XWAY™ ADM5120P
Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV;
X-GOLD™213 - PMB8810
UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA;
SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK™ 2;
128Kx8 EEPROM 128Kx8 EEPROM
ADM3120BX x8的EEPROM
IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc.
NXP Semiconductors N.V.
Infineon Technologies AG
Amphenol, Corp.
Vectron International, Inc.
Advanced Analogic Technologies, Inc.
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BC328-16/E6 BC328/E6 BC328-40/E6 BC327/E6 BC327-40 |
IC MAX 7000 CPLD 64 100-TQFP
MAX II CPLD 570 LE 256-FBGA
MAX II CPLD 570 LE 100-TQFP
MAX 7000 CPLD 192 MC 160-PQFP
MAX 7000 CPLD 32 MC 44-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
MAX 7000 CPLD 256 MC 100-FBGA 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 800mA的一（c）|26AA
800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
Mitsubishi Electric, Corp.
VISHAY SEMICONDUCTORS
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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NXP SEMICONDUCTORS
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 390-18R-2C-2.75W 390-18R-2C-5.5W 390-18R-2C-8.25S |
MEDIUM BLOW ELECTRIC FUSE, 390A, 2750VAC, 1500A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 390A, 5500VAC, 1500A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 390A, 8250VAC, 1440A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 700A, 5500VAC, 80000A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 550A, 5500VAC, 2400A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 450A, 8250VAC, 1910A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 450A, 2750VAC, 1950A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 200A, 2750VAC, 760A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 150A, 5500VAC, 390A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 130A, 2750VAC, 340A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 150A, 8250VAC, 440A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 200A, 5500VAC, 760A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 100A, 8250VAC, 225A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 100A, 5500VAC, 250A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 230A, 2750VAC, 1000A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 150A, 2750VAC, 390A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 450A, 5500VAC, 1950A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 170A, 2750VAC, 500A (IR), INLINE/HOLDER
MEDIUM BLOW ELECTRIC FUSE, 230A, 5500VAC, 1000A (IR), INLINE/HOLDER
|
HIROSE ELECTRIC Co., Ltd.
Littelfuse, Inc.
Microsemi, Corp.
|
| CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| TIP812-DOC-20 TIP812-TM-21 TIP812 TIP812-10 TIP812 |
SERCOS Controller SERCOS总线控制
RES 680 OHM 1% 3W SILICONE WW SERCOS总线控制
N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CDH20D10NP-2R0MC CDH20D10NP-R50MC CDH20D10NP-R80MC |
Small size inductor 2.2mm Max square and 1.1mm Max height
|
Sumida Corporation
|
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