| PART |
Description |
Maker |
| APT11N80BC3 APT11N80BC3G |
Power MOSFET; Package: TO-247 [B]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800;
Super Junction MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT47N60SC3 APT47N60BC3 |
Super Junction MOSFET
|
Advanced Power Technology
|
| APT77N60JC3 |
Super Junction MOSFET
|
Advanced Power Technology Ltd.
|
| APT20N60CC3 |
Super Junction MOSFET
|
Advanced Power Technology
|
| APT31N80JC3 |
SUPER JUNCTION MOSFET
|
Advanced Power Technology
|
| APT47N65BC3 |
Super Junction MOSFET
|
Microsemi Corporation
|
| APTC80A15SCTG |
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| HCH20NT60V |
600V N-Channel Super Junction MOSFET
|
SemiHow Co.,Ltd.
|
| TPA65R940C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| HCS12NK65V |
650V N-Channel Super Junction MOSFET
|
SemiHow Co.,Ltd.
|
