| PART |
Description |
Maker |
| PV7F2Y0NSG-201 PV7F2T0NSG-201 PV7F2Y0NSG-203 PV7F2 |
Vandal and Water Resistant, TEMPERATURE: -20°C to 70°C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20掳C to 70掳C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20隆?C to 70隆?C, CONTACT RESISTANCE: 50mOHM Max.
|
http://
E-SWITCH
|
| PV7 |
Vandal and Water Resistant Long Life Expectancy
|
lambind
|
| SKRCACD010 SKRCADD010 |
9mm Diameter Water-proof with Round Terminals (Radial Type)
|
ALPS ELECTRIC CO.,LTD.
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| S1P2655A03 S1P2655A05 S1P2655A01 S1P2655A02 S1P265 |
Linear integrated circuit. Input level TTL, CMOS
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SOP-16
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR DIP-16
LT Series Water Resistant Linear Position Transducer, 76,2 mm [3.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000203
Level Meter
Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS
|
ITT, Corp.
TE Connectivity, Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条，100V的，0.230欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| X24645SG-2.7 X24645F X24645G X24645I X24645S8G-2.7 |
ED,SMD 0805,RED,660NM, WATER CLEAR,20MCD@20mA
ED,SMD 1206,RED,660NM, WATER CLEAR,30MCD@20mA
Advanced 2-Wire Serial E2PROM with Block LockTM Protection 8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14
|
IC MICROSYSTEMS Sdn. Bhd.
|
| FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
