| PART |
Description |
Maker |
| MAPLST1900-060CF |
LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V
|
M/A-COM Technology Solutions, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PXAC201202FC-V2 |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz
|
Wolfspeed
|
| PXAC243502FV-V1 |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
|
Wolfspeed
|
| PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA181001GL09 |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz
|
Infineon Technologies AG
|
