| PART |
Description |
Maker |
| TLP181-GB TLP181_02 TLP181 TLP181GR TLP181GRL |
Photocoupler GaAs Ired & Photo .Transistor
GaAs Ired and Photo−Transistor
GaAs IRED & PHOTO-TRANSISTOR
Photo coupler (phototransitor output)
IC OPTOCOUPL AC/DC-IN 1-CH TRANS DC-OUT 4MFSOP
|
TOSHIBA[Toshiba Semiconductor]
|
| MTD6000PTT MTD6000PT-T MTD6000PTT-15 |
Peak Sensitivity Wavelength: 880nm
High Reliability in Demanding Environments
Photo Transistor
Photo Transistor
|
Marktech Corporate
|
| TPS617 E006915 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER
From old datasheet system
|
Toshiba
|
| TLP141G |
Programmable Controllers AC-Output Module Soild State Relay
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
Toshiba Semiconductor
STMicroelectronics
|
| PC1482 |
Power Transistor Chips
|
Intersil
|
| TLP507A |
PHOTO INTERRUPTER INFRARED LED PHOTOBARLINGTON TRANSISTOR
PHOTO-INTERRUPTER INFRARED LED PHOTODARLINGTON TRANSISTOR
|
Toshiba Semiconductor
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| TLP871 |
PHOTO-INTERRUPTER INFRARED LED PHOTODARLINGTON TRANSISTOR
TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTODARLINGTON TRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP371 TLP372 |
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
TOSHIBA[Toshiba Semiconductor]
|
| CL138 |
Photo Transistor
|
Micro Electronics
|
