PART |
Description |
Maker |
APT601R2BN |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 8A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 8A条(丁)|采用TO - 247AD
|
Diodes, Inc.
|
IXTH130N15T IXTQ130N15T |
130 A, 150 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247AD, 3 PIN N-Channel Enhancement Mode
|
IXYS, Corp. IXYS Corporation
|
FCA76N60N |
FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ
|
Fairchild Semiconductor
|
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
CDBUR70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
CDST-99-HF |
Halogen Free Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
APT50M60BFN |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 76A I(D) 晶体管| MOSFET功率模块|半桥| 500V五(巴西)直| 76A号(丁)
|
Fujitsu, Ltd.
|
IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
|
International Rectifier, Corp.
|
IXFH26N49Q |
26 A, 490 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
IRFP450R |
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247AD
|
New Jersey Semiconductors
|
APT5020BV |
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,26A I(D),TO-247AD
|
apt
|
|