| PART |
Description |
Maker |
| MABAES0017 |
E-Series RF 1:2.56 Impedance Ration Center Taped Transformer 5 - 65 MHz
|
MACOM[Tyco Electronics]
|
| 2SK246 E001482 |
FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| HI-8787 |
(HI-8787 / HI-8788) 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT
|
Holt Integrated Circuits
|
| HA3-2625-5 HA9P2625-5 HA9P2625-9 HA-2620 HA-2625 H |
From old datasheet system
100MHz High Input Impedance Very Wideband Uncompensated Operational Amplifiers
100MHz/ High Input Impedance/ Very Wideband/ Uncompensated Operational Amplifiers
INDUCTOR PWR TOROID 2.5UH SMD
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 2N6193 JANTXV2N6193 JANTX2N6193 |
PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561
PNP Transistor
|
Microsemi Corporation
|
| HA2-2602_883 HA-2602883 HA-2602_883 HA-2602/883 HA |
Wideband, High Impedance Operational Amplifier OP-AMP, 5000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8
Wideband, High Impedance Operational Amplifier 宽带，高阻抗运算放大
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HS-22620RH HS0-22620RH-Q HS9-22620RH HS9-22620RH/P |
Rad Hard Dual/ Wideband/ High Input Impedance Uncompensated Operational Amplifier
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational
Amplifier(抗辐射宽带、高非补偿输入阻抗运算放大器)
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier DUAL OP-AMP, 6000 uV OFFSET-MAX, 100 MHz BAND WIDTH, UUC18
|
Intersil Corporation
Intersil, Corp.
|
| HA-2620 HA-2626 HA-2625 |
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=0.5mV
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Rad-Hard
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=3.0mV
|
Intersil
|
| 25ZLH150MEFC6.3X11 25ZLH150MEFCTA6.3X11 25ZLH150ME |
105 Miniaturized, Long Life, Low impedance.
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
105?/a> Miniaturized, Long Life, Low impedance.
|
RUBYCON CORPORATION
|
