| PART |
Description |
Maker |
| MBM29F160BE-90TN MBM29F160BE-55TR MBM29F160BE-70 M |
Single-Channel Current-Limited Power Distribution Switch 8-SOIC -40 to 85
Replaced by TPS2042B : 0.7A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
16M (2M X 8/1M X 16) BIT
|
Fujitsu Limited
Fujitsu Component Limited.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MBM29SL160BD-12PFTR MBM29SL160BD-10PFTN MBM29SL160 |
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 16米（2米x 8/1M × 16）位
122 x 32 pixel format, Compact LCD size 16米（2米x 8/1M × 16）位
122 x 32 pixel format, LED Backlight available
16M (2M x 8/1M x 16) BIT
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| MAX1818 MAX1818EUAT MAX1818EUT15 MAX1818EUT18 MAX1 |
500mA Low-Dropout Linear Regulator in SOT23
Analog IC
Replaced by TMS320VC5506 : Digital Signal Processors 144-LQFP
Replaced by TMS320VC5506 : Digital Signal Processors 132-BQFP -40 to 85
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http://
Infineon Technologies AG
SIEMENS AG
|
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
