PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
EID1515-10 |
15.35-15.75 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIC4853-25 |
4.8-5.30 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1111-6 |
11.0-11.5 GHz 6-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EID1415A1-5 |
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIC1010-25 |
10.0-10.25 GHz 25-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EID1314A1-5 |
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
EID1416-12 |
14.0-16.0 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIC8596-15 EIC8596-15NH |
8.50-9.60 GHz 15-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc. http://
|