| PART |
Description |
Maker |
| M45PE80-VMP6G M45PE80-VMP6TG M45PE80-VMP6TP M45PE8 |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M459E16VMP6G M459E16VMP6P M459E16VMP6TG M459E16VMP |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
STMicroelectronics
|
| M45PE80-VMP6P |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M25PE80-VMW6G |
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout
|
STMicroelectronics
http://
|
| M25PE16-VMW6TG M25PE16-VMW6TP M25PE16-VMW6G M25PE1 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
