| PART |
Description |
Maker |
| EIA1114-4 |
11.0-14.0GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC44V4450_98 MGFC44V4450 MGFC44V445098 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC47A4450 |
4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450 |
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SW-392PIN |
3 Volt2 Watt Cellular T/R Changeover SwitchDC-2.0GHz
Schottky Barrier Diodes 肖特基势垒二极管
|
Amphenol, Corp.
|
| EIA1414-6 |
14.00-14.50 GHz 6-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1515-10 |
15.35-15.75 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1415A-8 |
14.40-15.40GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1415-2 EIC1415-2NH |
14.40-15.35GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC7785-10 |
7.70-8.50 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC5964-5 |
5.90-6.40 GHz 5-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
