| PART |
Description |
Maker |
| APT11N80BC3 APT11N80BC3G |
Power MOSFET; Package: TO-247 [B]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800; Super Junction MOSFET
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
| NCE60R180 |
N-Channel Super Junction Power MOSFET ll
|
Wuxi NCE Power Semicond...
|
| NCE60R900D |
N-Channel Super Junction Power MOSFET ll
|
Wuxi NCE Power Semicond...
|
| TPD65R1K2C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| AMS65R180 |
N-Channel Super Junction Power MOSFET
|
American MicroSemiconductor
|
| TPD60R580C |
600V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| NCE70R540 NCE70R540D NCE70R540F |
N-Channel Super Junction Power MOSFET ll
|
Wuxi NCE Power Semicond...
|
| TPP70R450C |
700V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| NCE70R260 NCE70R260D NCE70R260F |
N-Channel Super Junction Power MOSFET ll
|
Wuxi NCE Power Semicond...
|
| NCE70R900L |
N-Channel Super Junction Power MOSFET
|
Wuxi NCE Power Semicond...
|
| NCE70R1K2I NCE70R1K2K |
N-Channel Super Junction Power MOSFET
|
Wuxi NCE Power Semicond...
|
| APTC60DHM45T1G |
Asymmetrical bridge Super Junction MOSFET Power Module
|
Microsemi Corporation
|