| PART |
Description |
Maker |
| ZXTN5551GTA ZXTN5551GTC ZXTN5551G |
160V, SOT223, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| ZXTN5551FLTA ZXTN5551FL |
160V, SOT23, NPN High voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| DXT13003DG DXT13003DG-13 DXT13003DG-15 |
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| 2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|26
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126
160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| ZXTN25100DG ZXTN25100DGTA |
100V NPN high gain transistor in SOT223
|
Diodes Incorporated
Zetex Semiconductors
|
| FZT651QTA FZT651QTC FZT651TA FZT651TC FZT65112 |
60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| FZT558-15 |
400V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| FZT560-15 |
500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
