| PART |
Description |
Maker |
| 2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications
|
SANYO
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| AH102A-G |
Medium Power, High Linearity Amplifier
|
TriQuint Semiconductor
|
| AH101-PCB AH101-G |
Medium Power, High Linearity Amplifier
|
WJ Communication. Inc.
|
| APM0942-P29-13 |
High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor ...
|
| 2SC5945 2SC5945TR-E |
Si NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| HSG2002 HSG2002TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| APM2140-P29-13 |
Low Noise and High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor Busi...
|
| 2SC3670 E000875 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM OWER AMPLIFIER APPLICATIONS)
RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK
STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM OWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1893 E000575 |
TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBE闪光，中等功率放大器应用
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
