PART |
Description |
Maker |
PS21965-4S |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
STGW20NB60HD 6204 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT N沟道20A 600V 247 PowerMESH IGBT N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT From old datasheet system N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
STGP20NB60H 6203 |
From old datasheet system N-CHANNEL 20A - 600V TO-220 PowerMESH TM IGBT N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
PS21964-AT PS21964-CT PS21964-T PS21964-TW |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-AT PS21963-CT PS21963-T PS21963-TW |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
PS21353-N |
DIP - IPM 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
AOT20S60L |
600V 20A a MOS
|
Alpha & Omega Semicondu...
|
AOK20N60 |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
IRAMY20UP60B |
iMOTION Series 20A, 600V
|
International Rectifier
|