| PART |
Description |
Maker |
| MAPL-000822-002PP |
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE5550279A-T1 NE5550279A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5550979A-T1A-A NE5550979A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| PTVA127002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
