| PART |
Description |
Maker |
| 127141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 126284 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 137141H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| 123144H |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4590 SFH4595 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http://
Bright LED Electronics Corp.
|
| SFH426 SFH421 Q62703-P0331 Q62702-P1055 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode，在SMT Geh锓包GaAlA红外发射
GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SFH458002 SFH4580 SFH4585 |
GaAlAs Infrared Emitters (880 nm) in SMR? Package
GaAlAs Infrared Emitters (880 nm) in SMR庐 Package
GaAlAs Infrared Emitters (880 nm) in SMR㈢ Package
|
OSRAM GmbH
|
| TSAL7200 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
