| PART |
Description |
Maker |
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL7200-16 |
High Power Infrared Emitting Diode
|
Vishay Siliconix
|
| MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED) GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 554A4 MIE-554A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes Infrared Light Emitting Diodes From old datasheet system GaAs Infrared Light Emitting Diode
|
Panasonic Corporation Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
| MIE-304H4 304H4 |
Infrared Emitting Diodes (IRED) GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544L3 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544A4 |
GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
| MIE-144H4 |
GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL7200 TSAL720009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|