| PART |
Description |
Maker |
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位).0伏的CMOS只同步读/写,页模式闪 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc. Spansion Inc. SPANSION LLC
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. PROM Spansion, Inc. SPANSION LLC
|
| S29GL256N10TAIV12 S29GL128N10TAI022 S29GL128N11TAI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
|
| AM29PDL127H68VKI AM29PDL127H65VKIN AM29PDL127H68VK |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 85 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA80 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆
|
Advanced Micro Devices Spansion, Inc. Spansion Inc.
|
| AT49SN6416T |
64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
| AT49SN6416-70CI AT49SN6416T-70CI AT49SN6416 AT49SN |
64-MEGABIT (4M X 16) BURST/PAGE MODE 1.8-VOLT FLASH MEMORY
|
ATMEL Corporation
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| S29GL512P11TAI012 S29GL-P S29GL512P11TAI010 S29GL5 |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION[SPANSION]
|
| AT49BV6416C |
64M bit, 2.7-Volt Page Mode Flash Memory, Bottom Boot
|
Atmel
|
| S70GL02GP12FAI010 S70GL02GP12FAI012 S70GL02GP12FAI |
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION LLC
|
| S29GL064N S29GL032N |
(S29GLxxxN) 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
SPANSION
|
| S29GL01GP11FFIV13 S29GL128P12TAI022 S29GL256P13FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION
|