| PART |
Description |
Maker |
| SST29LE010-150-4C-NHE CAT25C33Y20 GLS29EE512-70-4I |
EEPROM 128K X 8 150ns
EEPROM (4kx8) 32K 2.5-6.0
EEPROM 64K X 8 70ns
EEPROM 128K X 8 70ns
16Kb Add-Only Memory 16K X 1 OTPROM, PDSO6
|
Silicon Storage Technology, Inc.
Advanced Semiconductor, Inc.
Maxim Integrated Products
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| AT28C010-12TU AT28C010E-15JU |
120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDSO32
150NS, PLCC, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 150 ns, PQCC32
|
Atmel, Corp.
|
| AS58C1001DG-15_883C AS58C1001DG-15_IT AS58C1001DG- |
128K x 8 EEPROM EEPROM Memory
|
Austin Semiconductor
|
| HN58X25256FPIE HN58X25128FPIE HN58X25128I HN58X251 |
Serial Peripheral Interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit) Electrically Erasable and Programmable Read Only Memory
|
RENESAS[Renesas Electronics Corporation]
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SA24C1024 |
1Mb, 128K x 8-bit memory; IIC serial EEPROM memory device
|
Saifun Semiconductors
|
| HN58V66AI HN58V65API-10 HN58V65API-10E HN58V65AT-1 |
Memory>EEPROM>Parallel EEPROM
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
|
RENESAS[Renesas Electronics Corporation]
|
| 25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V
128K SPI serial CMOS EEPROM 2.5-6.0V
SPI Serial EEPROM SPI串行EEPROM
128K/256K-BitSPISerialCMOSE2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128K SPI serial CMOS EEPROM 1.8-6.0V
256K SPI serial CMOS EEPROM 2.5-6.0V
128K/256K-Bit SPI Serial CMOS E2PROM
|
http://
STMicroelectronics N.V.
Semtech, Corp.
Abracon, Corp.
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM
16 Kbit Serial I 2 C EEPROM with Extended Addressing
(ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing
CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes
16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM，带有扩展寻址
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
