| PART |
Description |
Maker |
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| AS4SD8M16 AS4SD8M16DG-75_ET AS4SD8M16DG-75_IT AS4S |
128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| 48SD1616 48SD1616RPFH 48SD1616RPFK 48SD1616RPFE |
256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72
|
Maxwell Technologies, Inc
|
| 97SD3248RPQK |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks 32M X 48 SYNCHRONOUS DRAM, 6 ns, PQFP132
|
Maxwell Technologies, Inc
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT48H16M32LF MT48H16M32LFCJ-75 MT48H16M32LFCJ-75IT |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
MICRON[Micron Technology]
|
| 97SD3232RPMK 97SD3232 97SD3232RPME 97SD3232RPMH 97 |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3240 97SD324006 |
1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
|
Maxwell Technologies
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM
x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
