| PART |
Description |
Maker |
| 189-055C 189-055M 189-055NF 189-055ZN |
Special Backshell with Direct Coupling
|
Glenair, Inc.
|
| 450EB001M20 450EB001M22 450EB001M24 450ES001M10 45 |
Connector Designator E Direct Coupling
|
Glenair, Inc.
|
| 450DS001M10 450DS001M12 450DS001M14 450DS001M16 45 |
Connector Designator D Direct Coupling
|
Glenair, Inc.
|
| 450JB001M08 450JS001M08 450JS001M10 450JS001M12 45 |
Connector Designator J Direct Coupling
|
Glenair, Inc.
|
| PLCDA03C-6 PLCDA05C-6 PLCDA15C-6 |
Direct ProTek Replacement:PLCDA05C-6
Direct ProTek Replacement:PLCDA15C-6
Direct ProTek Replacement:PLCDA03C-6 直接太克替代：PLCDA03C - 6
|
Sumida, Corp.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MS3459 |
STRAIGHT PLUG WITH SELF-LOCKING COUPLING NUT
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| MC-4R128CPE6C-845 MC-4R128CPE6C MC-4R128CPE6C-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
Performance Semiconductor, Corp.
NEC Corp.
NEC[NEC]
|
| ITSG4108AGG ITSG4108RGG ITSG3108AGG ITSG3108RGG |
Plug Connector with Rubber-Coated Coupling Nut
|
Glenair, Inc.
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
