| PART |
Description |
Maker |
| PTFA091203EL |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
| PTFA091201HL PTFA091201GL PTFA091201GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
| PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
| PTFB091507FH |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
|
Infineon Technologies AG
|
| PTFA092211EL PTFA092211FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| MHW916 |
16 WATT 925-960 MHz RF POWER AMPLIFIER
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| SM08790-51LD |
870 - 900 MHz 120 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| ZB5CS-920-10W |
Power wer Splitter/Combiner 5 Way-0° 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0∑ 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0 450 to 920 MHz
Power wer Splitter/Combiner 5 Way-0450 to 920 MHz
|
MINI[Mini-Circuits]
|
| PD60-AMPS/GSMSERIES PD60-0015-06S |
High Power Transmit Combiners For AMPS/GSM 800960 MHz
高功率发射合路的AMPS /兆赫的GSM八十万?九百六十零
800 MHz - 960 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
|
TOKO, Inc.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| DB-55008L-960 |
860 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER ROHS COMPLIANT PACKAGE
|
ST Microelectronics
|
| ZN2PD-920-S |
800 MHz - 920 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS ROHS COMPLIANT, CASE VVV180
|
Mini-Circuits
|
